Dynex Semiconductor Ltd is based in the city of Lincoln which is situated in the Eastern Midlands of England about 150 miles north of London. A semiconductor business was opened in Lincoln by AEI Semiconductors in 1956 manufacturing some of the first silicon based semiconductor components in the world. In 2000, Dynex Power Inc, a small, publicly quoted Canadian company, formed Dynex Semiconductor Ltd.

Products
• High power bipolar discrete semiconductors
• High power IGBT modules and die

Bipolar Discrete Products

Dynex's Bipolar products consist of Phase Control Thyristors (SCR), High Power Rectifier Diodes, Gate Turn-off (GTO) Thyristors and associated diodes, and Pulse Power Thyristors. Phase Control Thyristors feature the latest Ion Implant (i2) technology which produces marked reductions in conduction losses which, combined with reduced thermal resistance, gives substantially more power handling capability. The voltage range extends from 1200V to 8500V and average current ratings from 500A to nearly 7000A. Dynex Rectifier Diodes are particularly suitable for IGBT inverter front-end rectifiers, very high current applications like aluminium smelting and trackside rectification. Voltages extend to 6kV and current to 11kA.

IGBT Modules & Die

Dynex offers a comprehensive range of high power IGBT and complementary diode modules. The product family includes modules with voltage ratings from 1,200V to 6,500V and current ratings from 100A to 3,600A. All Dynex modules are designed and constructed to meet the most rigorous performance and reliability requirements in the marketplace.

Types available include:-

• IGBT Module
• Phase Control Thyristors
• Rectifier Diodes
• Fast Recovery Diodes
• Fast Recovery Diodes Modules
• Gate Turn-off Thyristor
• Pulse Power Thyristor

Our product range